منابع مشابه
The nitrogen vacancy in aluminium nitride
We have carried out a computational study for the nitrogen vacancy in charge states +3, +2 and +1 in AlN in the metastable zinc-blende phase. The vacancy and its four nearest-neighbour Al ions are treated as a molecular cluster, embedded in an infinite classical shell-model crystal. The following ground state properties, all of which are determinable from experiment, have been calculated: total...
متن کاملThermal and electrical conductivity of Aluminium Nitride nanofluids
This study was designed to experimentally measure the thermal and electrical conductivities of Aluminium Nitride/Ethylene Glycol (AlN/EG) nanofluids. Transmission electron microscopy (TEM) was used to characterize the shape of AlN nanoparticles. Nanofluids with different particle volume concentrations of 0.5%, 1%, 2%, 3%, 4%, and 5% were utilized. The thermal and electrical conductivities of the...
متن کاملMICROSTRUCTURAL STUDY OF SILICON NITRIDE WHISKERS PRODUCED BY NITRIDATION OF PLASMA-SPRAYED SILICON LAYERS
plasma-sprayed silicon layers have been used to produce silicon nitride layers with fibrous microstructure which optimizes fracture toughness and strength. SEM examination of the specimens shows that the surface is covered by fine needles and whiskers of Si3N4.In order to study the oxygen contamination effect as well as other contaminants introduced during spraying and nitridation processes, su...
متن کاملScandium Aluminium Nitride-Based Film Bulk Acoustic Resonators
Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devices as filters or delay lines, but also offer exciting opportunities as biological or gas sensors. In this work, solidly mounted FBARs were manufactured by substituting commonly used pure aluminium nitride (AlN) by scandium doped aluminium nitride (ScAlN) thin films as the piezoelectric layer. The...
متن کاملMechanochemical route to the synthesis of nanostructured Aluminium nitride
Hexagonal Aluminium nitride (h-AlN) is an important wide-bandgap semiconductor material which is conventionally fabricated by high temperature carbothermal reduction of alumina under toxic ammonia atmosphere. Here we report a simple, low cost and potentially scalable mechanochemical procedure for the green synthesis of nanostructured h-AlN from a powder mixture of Aluminium and melamine precurs...
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ژورنال
عنوان ژورنال: Nature
سال: 1963
ISSN: 0028-0836,1476-4687
DOI: 10.1038/197587b0